Partnership between large companies in the field of making chips in the world of smartphones is not surprising at all. Almost every company cooperates with ARM in one way or another, because of their patented reference designs and architecture, which has already been home to all of our most beloved devices. What’s surprising, and it is likely to surprise, is that Samsung, in partnership with the ARM, will design the chips whose production process will be so great that it will reach an unprecedented 7nm so far only a few years ago it was impossible. Moreover, the chips made in the 7nm process will go into massive production sometime during the second half of the current year, which is surprisingly fast. Of course, to see the same on commercial products, we will almost certainly wait 2019, maybe 2020.

For those who do not know, the production process (less nm) simultaneously means faster and cooler processor (chip) resulting in less energy consumption. By shifting to this production processes, end-users are most profitable because their devices will be more energy-efficient, faster and cooler, and these three factors are perhaps the most important for many users. The chips that Samsung will make with ARM already this year will target a 3GHz workstation that is likely to be achieved with ease and why our future devices will work super-fast but will not overheat.

As of next year, Samsung is planning to start producing chips in a manufacturing process of just 5nm, and the same process is possible because of the EUV lithographic process (Extreme Ultra Violet), so these chips will be even more efficient than those currently being developed. The ARM claims that the Cortex A-76 core at 3.0GHz (7nm) will be 35% faster than the current Cortex A-75 (10nm) cores and that the new core will be up to 40% less hungry. These new ARM A-76 cores are considered ready for use in laptops so we should not be surprised to see them in that sphere of the product.

Samsung has also announced a long-term chip-based plan, and the manufacturing process will improve as long as it does not even reach 3nm using GateAll-around-Early GAAE technology.

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